ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,810, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.).

"Co-doping of thin film transistors" was invented by Van H. Le (Beaverton, Ore.), Timothy Jen (Portland, Ore.), Vishak Venkatraman (Portland, Ore.), Shailesh Kumar Madisetti (Portland, Ore.), Cheng Tan (Hillsboro, Ore.), Harish Ganapathy (Portland, Ore.), James Pellegren (Portland, Ore.), Kamal H. Baloch (Portland, Ore.) and Abhishek Anil Sharma (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein for forming thin film transistor structures having co-doped semiconductor regions. The addition of insulating dopants can be used to improve...