ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,802, issued on April 7, was assigned to LEADTREND TECHNOLOGY Corp. (Zhubei City, Taiwan).

"High-voltage tolerant device and detection circuit" was invented by Tsung-Chien Wu (Zhubei City, Taiwan), Jhen-Hong Li (Zhubei City, Taiwan), Chih-Wen Hsiung (Zhubei City, Taiwan) and Cheng-Sheng Kao (Zhubei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a high-voltage device with ESD robustness. The high-voltage device is formed on a surface of a semiconductor substrate of a first type. A deep well of a second type opposite to the first type is formed on the surface. A filed isolation layer on the surface separates a drain active reg...