US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,141, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Japan). "Memory device and method of forming th... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Three-dimensional non-volatile memory device including horizontal channel region" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,142, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Three-dimensional non-volatile memory device i... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Three-dimensional memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,143, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Three-dimensional memory device and m... Read More

US Patent Issued to Semiconductor Energy Laboratory on May 19 for "Metal oxide film and semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,144, issued on May 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Metal oxide film and semiconductor device"... Read More

US Patent Issued to Kepler Computing on May 19 for "Fabricating non-linear polar material based capacitors for memory and logic" (California, Oregon Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,145, issued on May 19, was assigned to Kepler Computing Inc. (San Francisco). "Fabricating non-linear polar material based capacitors for me... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Memory cell with a buffer layer and its fabrication process" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,146, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory cell with a buffer layer and i... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Memory selector" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,147, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory selector" was invented by Chen... Read More

US Patent Issued to Micron Technology on May 19 for "Semiconductor die stacks and associated systems and methods" (California, Idaho Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,148, issued on May 19, was assigned to Micron Technology Inc. (Boise, Idaho). "Semiconductor die stacks and associated systems and methods" ... Read More

US Patent Issued to SK hynix on May 19 for "Semiconductor device and manufacturing method of semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,150, issued on May 19, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and manufacturing method of semicondu... Read More

US Patent Issued to Hua Hong Semiconductor (WUXI) on May 19 for "Digital isolator structure and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,151, issued on May 19, was assigned to Hua Hong Semiconductor (WUXI) Ltd. (Wuxi, China). "Digital isolator structure and method for forming ... Read More

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