US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Memory selector" (Taiwanese, American Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,147, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory selector" was invented by Cheng-Hsien Wu (Hsinchu, Taiwan), Xinyu Bao (Fremont, Calif.) and Elia Ambrosi (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include a method of forming a cross-point memory device, the method and device forming a multi-layered selector material. A first level of the multi-layered selector structure may include a subset of the elements of a second level of the multi-tiered selector structure. A gradient concentration of the switching elements may be found in the selector structure, first...