ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,144, issued on May 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Metal oxide film and semiconductor device" was invented by Shunpei Yamazaki (Tokyo), Yasuhiro Jinbo (Isehara, Japan), Hitoshi Kunitake (Isehara, Japan), Yuji Egi (Atsugi, Japan), Masahiro Takahashi (Atsugi, Japan) and Shuntaro Kochi (Yokohama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A material having favorable ferroelectricity is provided. An embodiment of the present invention is a metal oxide film including a first layer and a second layer. The first layer contains first oxygen and hafnium, and the second layer contains second oxygen and z...