US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Three-dimensional memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,143, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device and method" was invented by Meng-Han Lin (Hsinchu, Taiwan), Sai-Hooi Yeong (Zhubei City, Taiwan), Chia-En Huang (Xinfeng Township, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a device includes a first gate structure over a substrate, the first gate structure including a first gate electrode over a first side of a first gate dielectric; a first electrode and a second electrode disposed over a second side of the first gate dielectric opposite the first side; ...