US Patent Issued to Silicon Storage Technology on May 26 for "Memory device formed on silicon-on-insulator substrate, and method of making same" (French, American Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,783, issued on May 26, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.). "Memory device formed on silicon-on-insulator sub... Read More

US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 26 for "Memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,784, issued on May 26, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Memory devices and methods for forming the same... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Field effect transistor with top-protected gate electrode and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,785, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with top-prot... Read More

US Patent Issued to eMemory Technology on May 26 for "Memory device and method for controlling verification voltage of memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,786, issued on May 26, was assigned to eMemory Technology Inc. (Hsin-Chu, Taiwan). "Memory device and method for controlling verification vo... Read More

US Patent Issued to Kioxia on May 26 for "Semiconductor memory device and method of manufacturing semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,787, issued on May 26, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device and method of manufacturing semiconductor memory d... Read More

US Patent Issued to Micron Technology on May 26 for "Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells" (Idaho, Oregon Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,788, issued on May 26, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated circuitry, memory arrays comprising strings of mem... Read More

US Patent Issued to Yangtze Memory Technologies on May 26 for "Three-dimensional NAND memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,789, issued on May 26, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional NAND memory device and method... Read More

US Patent Issued to Samsung Electronics on May 26 for "Three-dimensional semiconductor memory device with diffusion stop layer and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,790, issued on May 26, was assigned to Samsung Electronics Co. Ltd. (Suwon-si, South Korea). "Three-dimensional semiconductor memory device ... Read More

US Patent Issued to SK hynix on May 26 for "Semiconductor device and manufacturing method thereof" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,791, issued on May 26, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and manufacturing method thereof" was... Read More

US Patent Issued to MACRONIX International on May 26 for "Method for manufacturing three-dimensional memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,792, issued on May 26, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Method for manufacturing three-dimensional memory... Read More

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