US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 16 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,185, issued on June 16, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory devices and methods ... Read More

US Patent Issued to SK hynix on June 16 for "Semiconductor device and manufacturing method of the semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,186, issued on June 16, was assigned to SK hynix Inc. (Icheon-si, Japan). "Semiconductor device and manufacturing method of the semiconduct... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor memory devices and electronic systems including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,187, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices and electronic ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor memory device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,188, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor memory device and electroni... Read More

US Patent Issued to Micron Technology on June 16 for "Integrated assemblies and methods of forming integrated assemblies" (Idaho Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,189, issued on June 16, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated assemblies and methods of forming integrated ass... Read More

US Patent Issued to Micron Technology on June 16 for "Intervening polysilicon materials that are thicker at distal edges than at pillars defining memory cells and related apparatuses, systems, and methods" (Idaho Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,190, issued on June 16, was assigned to Micron Technology Inc. (Boise, Idaho). "Intervening polysilicon materials that are thicker at dista... Read More

US Patent Issued to Kioxia on June 16 for "Semiconductor storage device with reduced threshold voltage fluctuations" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,191, issued on June 16, was assigned to Kioxia Corp. (Tokyo). "Semiconductor storage device with reduced threshold voltage fluctuations" wa... Read More

US Patent Issued to Kioxia on June 16 for "Memory device including a plurality of members separating or surrounding a plurality of layer stacks" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,192, issued on June 16, was assigned to Kioxia Corp. (Tokyo). "Memory device including a plurality of members separating or surrounding a p... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor device including stack region and pad region having different thickness" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,193, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including stack region ... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,194, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device" was invented by You... Read More

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