US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on June 16 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,185, issued on June 16, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Wenbo Zhang (Wuhan, China), Kai Yu (Wuhan, China), Zhiyong Lu (Wuhan, China), Sheng Peng (Wuhan, China), Zhaohui Cheng (Wuhan, China), Zhangyi Li (Wuhan, China), Jing Gao (Wuhan, China) and Lei Xue (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a first semiconductor structure including alternating first dielectric layers and first...