US Patent Issued to Kioxia on June 16 for "Semiconductor storage device with reduced threshold voltage fluctuations" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,191, issued on June 16, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device with reduced threshold voltage fluctuations" was invented by Hiroaki Kosako (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor storage device includes word lines stacked in a first direction with bit lines above word lines in the first direction. A plurality of select gate lines are between the word lines and the bit lines in the first direction, and a semiconductor layer extends through the word lines and select gate lines. A charge storage film is between the word lines and the first semiconduct...