US Patent Issued to DENSO on June 2 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,174, issued on June 2, was assigned to DENSO Corp. (Kariya-city, Japan). "Semiconductor device" was invented by Atsuya Akiba (Kariya-city, J... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Capacitance reduction for back-side power rail device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,176, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Capacitance reduction for back-side p... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on June 2 for "Thin-film transistors for detecting miniature targets" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,177, issued on June 2, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Thin-film transistors for detecti... Read More

US Patent Issued to International Business Machines on June 2 for "Nanosheet replacement metal gate patterning scheme" (New York Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,178, issued on June 2, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet replacement metal gate patterning sc... Read More

US Patent Issued to International Business Machines on June 2 for "Co-integration of source-drain trench metal cut and gate-contact-over active device for advanced transistor architectures" (New York, New Hampshire, California Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,179, issued on June 2, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Co-integration of source-drain trench metal cu... Read More

US Patent Issued to Intel on June 2 for "Fabrication of gate-all-around integrated circuit structures having additive gate structures" (Oregon Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,180, issued on June 2, was assigned to Intel Corp. (Santa Clara, Calif.). "Fabrication of gate-all-around integrated circuit structures havi... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Multiple gate patterning methods towards future nanosheet scaling" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,181, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Multiple gate patterning methods towa... Read More

US Patent Issued to Samsung Display on June 2 for "Display panel and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,182, issued on June 2, was assigned to Samsung Display Co. Ltd. (Yongin-Si, South Korea). "Display panel and method of manufacturing the sam... Read More

US Patent Issued to Kioxia on June 2 for "Semiconductor device and semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,183, issued on June 2, was assigned to Kioxia Corp. (Tokyo). "Semiconductor device and semiconductor memory device" was invented by Masaya T... Read More

US Patent Issued to Magnolia White on June 2 for "Semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,184, issued on June 2, was assigned to Magnolia White Corp. (Tokyo). "Semiconductor device" was invented by Takaya Tamaru (Tokyo), Masashi T... Read More

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