US Patent Issued to International Business Machines on June 2 for "Co-integration of source-drain trench metal cut and gate-contact-over active device for advanced transistor architectures" (New York, New Hampshire, California Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,179, issued on June 2, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Co-integration of source-drain trench metal cut and gate-contact-over active device for advanced transistor architectures" was invented by Julien Frougier (Albany, N.Y.), Sagarika Mukesh (Albany, N.Y.), Albert M Chu (Nashua, N.H.), Ruilong Xie (Niskayuna, N.Y.), Andrew M. Greene (Slingerlands, N.Y.), Eric Miller (Watervliet, N.Y.), Junli Wang (Slingerlands, N.Y.), Veeraraghavan S. Basker (Fremont, Calif.), Prateek Hundekar (Guilderland, N.Y.), Tushar Gupta (Albany, N.Y.) and Su Chen Fan (Cohoes, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semicondu...