US Patent Issued to Taiwan Semiconductor Manufacturing on June 2 for "Capacitance reduction for back-side power rail device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,176, issued on June 2, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Capacitance reduction for back-side power rail device" was invented by Shi Ning Ju (Hsinchu City, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan), Kuo-Cheng Chiang (Zhubei City, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Wen-Ting Lan (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor transistor device including a channel structure, gate structure, a first source/drain structure, a second source/drain structure, and a back-side source/drain contact. The gate structure overlies the channel structure. The first s...