US Patent Issued to NAMI MOS on April 14 for "SiC trench MOSFET with an embedded junction barrier Schottky diode" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,505, issued on April 14, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan). "SiC trench MOSFET with an embedded junction barrier... Read More

US Patent Issued to NAMI MOS on April 14 for "SiC trench MOSFET with an embedded junction barrier Schottky diode" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,505, issued on April 14, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan). "SiC trench MOSFET with an embedded junction barrier... Read More

US Patent Issued to Regents of the University of Minnesota on April 14 for "Non-covalent modification of graphene-based chemical sensors" (Pennsylvania, Minnesota Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,506, issued on April 14, was assigned to Regents of the University of Minnesota (Minneapolis). "Non-covalent modification of graphene-base... Read More

US Patent Issued to Regents of the University of Minnesota on April 14 for "Non-covalent modification of graphene-based chemical sensors" (Pennsylvania, Minnesota Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,506, issued on April 14, was assigned to Regents of the University of Minnesota (Minneapolis). "Non-covalent modification of graphene-base... Read More

US Patent Issued to Renesas Electronics on April 14 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,507, issued on April 14, was assigned to Renesas Electronics Corp. (Tokyo). "Method of manufacturing semiconductor device" was invented by... Read More

US Patent Issued to Renesas Electronics on April 14 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,507, issued on April 14, was assigned to Renesas Electronics Corp. (Tokyo). "Method of manufacturing semiconductor device" was invented by... Read More

US Patent Issued to SK hynix on April 14 for "Semiconductor device having side spacer patterns" (South Korean Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,508, issued on April 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device having side spacer patterns" was ... Read More

US Patent Issued to SK hynix on April 14 for "Semiconductor device having side spacer patterns" (South Korean Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,508, issued on April 14, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device having side spacer patterns" was ... Read More

US Patent Issued to TEXAS INSTRUMENTS on April 14 for "High voltage transistor with a field plate" (Texas Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,509, issued on April 14, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "High voltage transistor with a field plate" was invented by Ram... Read More

US Patent Issued to TEXAS INSTRUMENTS on April 14 for "High voltage transistor with a field plate" (Texas Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,509, issued on April 14, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "High voltage transistor with a field plate" was invented by Ram... Read More

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