ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,509, issued on April 14, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).
"High voltage transistor with a field plate" was invented by Ramana Tadepalli (McKinney, Texas) and Chang Soo Suh (Allen, Texas).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a described example, an apparatus includes a transistor formed on a semiconductor substrate, the transistor including: a transistor gate and an extended drain between the transistor gate and a transistor drain contact; a transistor source contact coupled to a source contact probe pad; a first dielectric layer covering the semiconductor substrate and the transistor gate; a source field plate on the fir...