US Patent Issued to Renesas Electronics on April 14 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,507, issued on April 14, was assigned to Renesas Electronics Corp. (Tokyo).

"Method of manufacturing semiconductor device" was invented by Futoshi Komatsu (Tokyo), Tomoo Nakayama (Tokyo), Katsuhiro Uchimura (Tokyo) and Hiroshi Inagawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes: forming a silicon oxide film covering each of a first main surface and a second main surface of a semiconductor substrate; forming a redistribution wiring on the first main surface side of the semiconductor substrate; and grinding the second main surface of the semiconductor substrate. This grinding step is...