US Patent Issued to NAMI MOS on April 14 for "SiC trench MOSFET with an embedded junction barrier Schottky diode" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,505, issued on April 14, was assigned to NAMI MOS Co. LTD. (New Taipei City, Taiwan).

"SiC trench MOSFET with an embedded junction barrier Schottky diode" was invented by Fu-Yuan Hsieh (New Taipei City, Taiwan) and Lin Xu (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A SiC trench MOSFET with an embedded junction Schottky barrier diode (JBSD) having P-shield (PS) regions surrounding bottoms of source-body-Schottky contact (SBSC) trenches for gate oxide electric-field and switching loss reductions is disclosed. A source metal connects with the PS regions and the JBSD directly. Sidewall P (SP) regions are formed along a portion of sidewalls...