US Patent Issued to SK hynix on July 7 for "Stack-type memory device having a leakage control block vertically between a memory cell array and a peripheral circuit block" (South Korean Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,189, issued on July 7, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Stack-type memory device having a leakage control block ve... Read More

US Patent Issued to Micron Technology on July 7 for "Drain-side wordline voltage boosting to reduce lateral electron field during a programming operation" (California Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,190, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Drain-side wordline voltage boosting to reduce lateral electr... Read More

US Patent Issued to Micron Technology on July 7 for "Seeding bias control for sub-block groups in a memory device" (California, Idaho Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,191, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Seeding bias control for sub-block groups in a memory device"... Read More

US Patent Issued to SK hynix on July 7 for "Memory device for supporting efficient erase operation and operating method of memory device" (South Korean Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,192, issued on July 7, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory device for supporting efficient erase operation and... Read More

US Patent Issued to Sandisk Technologies on July 7 for "Non-volatile memory with adjustable erase voltage" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,193, issued on July 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Non-volatile memory with adjustable erase voltage" was... Read More

US Patent Issued to Micron Technology on July 7 for "Interfaces between higher voltage and lower voltage wafers and related apparatuses and methods" (Idaho, California Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,194, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Interfaces between higher voltage and lower voltage wafers an... Read More

US Patent Issued to Kioxia on July 7 for "Semiconductor memory device with even and odd coplanar wordlines" (Japanese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,195, issued on July 7, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device with even and odd coplanar wordlines" was invented... Read More

US Patent Issued to eMemory Technology on July 7 for "Level shifter" (Taiwanese Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,196, issued on July 7, was assigned to eMemory Technology Inc. (Hsin-Chu, Taiwan). "Level shifter" was invented by Dung Le Tan Hoang (Hsinch... Read More

US Patent Issued to SILICON MOTION on July 7 for "Data storage device and control method for non-volatile memory" (Taiwanese Inventor)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,197, issued on July 7, was assigned to SILICON MOTION INC. (Jhubei City, Taiwan). "Data storage device and control method for non-volatile m... Read More

US Patent Issued to Micron Technology on July 7 for "Alternative erase schemes for reliability-risk word lines" (California Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,198, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho). "Alternative erase schemes for reliability-risk word lines" wa... Read More

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