US Patent Issued to Micron Technology on July 7 for "Drain-side wordline voltage boosting to reduce lateral electron field during a programming operation" (California Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,190, issued on July 7, was assigned to Micron Technology Inc. (Boise, Idaho).

"Drain-side wordline voltage boosting to reduce lateral electron field during a programming operation" was invented by Vinh Quang Diep (Hayward, Calif.), Ching-Huang Lu (Fremont, Calif.) and Yingda Dong (Los Altos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A request to execute a programming operation to program a set of memory cells associated with a target wordline of a memory device is identified. At a first time during application of a programming voltage to the target wordline, causing a first adjusted pass through voltage to be applied to a first portion of...