US Patent Issued to Sandisk Technologies on July 7 for "Non-volatile memory with adjustable erase voltage" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,676,193, issued on July 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with adjustable erase voltage" was invented by Xuan Tian (Shanghai), Liang Li (Shanghai) and Jojo Xing (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "An adjustable kick voltage and an adjustable time duration are adjusted/set based on one or more conditions of a non-volatile memory. During an erase process, an erase voltage pulse is applied to a set of non-volatile memory cells of the non-volatile memory including driving an erase pulse voltage magnitude to an elevated voltage that is equal to a base erase voltage plus the adjusted kick...