US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, method for manufacturing semiconductor structure, memory and method for manufacturing memory" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,525, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, method for manuf... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,526, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for ma... Read More

US Patent Issued to Intel on April 21 for "Integrated circuit structures having memory access transistor with backside contact" (Oregon, California Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,527, issued on April 21, was assigned to Intel Corp. (Santa Clara, Calif.). "Integrated circuit structures having memory access transistor... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,528, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Youn... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure comprising storage chip bonded with control chip and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,529, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure comprising storag... Read More

US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor device structure with air gap and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,530, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device structure with air gap an... Read More

US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor device having trench capacitors formed on channel structures and methods for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,531, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device having trench capacitors ... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for manufacturing semiconductor structure" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,532, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for ma... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, method for manufacturing same, and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,533, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, method for manuf... Read More

US Patent Issued to NANYA TECHNOLOGY on April 21 for "Memory device with air gap and method for preparing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,534, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device with air gap and method for prep... Read More

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