US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure comprising storage chip bonded with control chip and method for forming same" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,529, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure comprising storage chip bonded with control chip and method for forming same" was invented by Kanyu Cao (Hefei, China), Tzung-Han Lee (Hefei, China), Chih-Cheng Liu (Hefei, China) and Huaiwei Yang (Hefei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a storage chip, a control chip, and a capacitor structure. The storage chip includes an array area. The control chip includes a peripheral area. The control chip and the storage chip are connected in a face-to-face bonding manner. The capacit...