US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure, method for manufacturing same, and semiconductor memory" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,533, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure, method for manufacturing same, and semiconductor memory" was invented by Meng Huang (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes: a substrate; and a plurality of device structures, a plurality of bit line structures and a plurality of word line structures formed on the substrate. The device structure extends in a first direction, and the word line structure extends in a second direction, and the bit line structure extends in a third direction. The device structure includes ...