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US Patent Issued to TEXAS INSTRUMENTS on April 7 for "Vertical trench gate fet with split gate" (Texas, Pennsylvania Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,772, issued on April 7, was assigned to TEXAS INSTRUMENTS Inc. (Dallas). "Vertical trench gate fet with split gate" was invented by Sunglyo... Read More


US Patent Issued to HITACHI ENERGY on April 7 for "Trench sic power semiconductor device" (Swiss Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,773, issued on April 7, was assigned to HITACHI ENERGY LTD (Zurich, Switzerland). "Trench sic power semiconductor device" was invented by M... Read More


US Patent Issued to SAMSUNG ELECTRONICS on April 7 for "Semiconductor devices" (South Korean Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,774, issued on April 7, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices" was invented by Jongc... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on April 7 for "Source/drains in semiconductor devices and methods of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,775, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Source/drains in semiconductor devi... Read More


US Patent Issued to International Business Machines on April 7 for "Nanosheet epitaxy with full bottom isolation" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,776, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nanosheet epitaxy with full bottom isolation... Read More


US Patent Issued to Intel on April 7 for "Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stability" (Oregon, Maryland Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,777, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.). "Low temperature, high germanium, high boron SiGe:B pEPI with ti... Read More


US Patent Issued to INSTITUTE OF MICROELECTRONICS. CHINESE ACADEMY OF SCIENCES on April 7 for "Semiconductor device, method for manufacturing semiconductor device, and electronic apparatus including the semiconductor device" (New York Inventor)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,778, issued on April 7, was assigned to INSTITUTE OF MICROELECTRONICS. CHINESE ACADEMY OF SCIENCES (Beijing). "Semiconductor device, method... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFCATURING on April 7 for "Gate-all-around device with protective dielectric layer and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,779, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFCATURING Co. LTD. (Hsinchu, Taiwan). "Gate-all-around device with protect... Read More


US Patent Issued to International Business Machines on April 7 for "Gate-all-around transistors with hybrid orientation" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,780, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Gate-all-around transistors with hybrid orie... Read More


US Patent Issued to GE AVIATION SYSTEMS on April 7 for "Semiconductor switching device" (New York Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,781, issued on April 7, was assigned to GE AVIATION SYSTEMS LLC (Grand Rapids, Mich.). "Semiconductor switching device" was invented by Col... Read More