US Patent Issued to Intel on April 7 for "Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stability" (Oregon, Maryland Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,777, issued on April 7, was assigned to Intel Corp. (Santa Clara, Calif.).

"Low temperature, high germanium, high boron SiGe:B pEPI with titanium silicide contacts for ultra-low PMOS contact resistivity and thermal stability" was invented by Debaleena Nandi (Hillsboro, Ore.), Cory Bomberger (College Park, Md.), Diane Lancaster (Hillsboro, Ore.), Gilbert Dewey (Beaverton, Ore.), Sandeep K. Patil (Portland, Ore.), Mauro J. Kobrinsky (Portland, Ore.), Anand S. Murthy (Portland, Ore.) and Tahir Ghani (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gate-all-around integrated circuit structures having confined epitaxial source or drain stru...