US Patent Issued to TEXAS INSTRUMENTS on April 7 for "Vertical trench gate fet with split gate" (Texas, Pennsylvania Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,772, issued on April 7, was assigned to TEXAS INSTRUMENTS Inc. (Dallas).

"Vertical trench gate fet with split gate" was invented by Sunglyong Kim (Allen, Texas), Seetharaman Sridhar (Richardson, Texas), Meng-Chia Lee (Allen, Texas), Thomas Eugene Grebs (Bethlehem, Pa.) and Hong Yang (Richardson, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first, second and third trenches formed in a semiconductor layer having a first conductivity type. Each trench includes a corresponding field plate and a corresponding gate over each field plate. A first body region having a second opposite conductivity type is between the f...