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US Patent Issued to Fujitsu on Aug. 4 for "Graphene optical sensor" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,763, issued on Aug. 4, was assigned to Fujitsu Ltd. (Kawasaki, Japan). "Graphene optical sensor" was invented by Hiroyasu Yamashita (Isehara... Read More


US Patent Issued to STMICROELECTRONICS INTERNATIONAL on Aug. 4 for "Method for creating an ohmic contact on a high-power electrical diode" (Italian Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,764, issued on Aug. 4, was assigned to STMICROELECTRONICS INTERNATIONAL N.V. (Geneva). "Method for creating an ohmic contact on a high-power... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 4 for "Semiconductor device and methods of formation" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,765, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device and methods of f... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Replacement sidewall spacers" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,766, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Replacement sidewall spacers" was... Read More


US Patent Issued to Industrial Technology Research Institute on Aug. 4 for "Semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,767, issued on Aug. 4, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan). "Semiconductor device" was invented by Ch... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor device including extended backside contact structure" (New York, Virginia Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,768, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including extended backsi... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor structure and method for manufacturing the same" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,769, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING LTD. (Hsinchu, Taiwan). "Semiconductor structure and method for ma... Read More


US Patent Issued to Hon Young Semiconductor on Aug. 4 for "Power module including a semiconductor device with parasitic diode" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,770, issued on Aug. 4, was assigned to Hon Young Semiconductor Corp. (Hsinchu City, Taiwan). "Power module including a semiconductor device ... Read More


US Patent Issued to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Method of manufacturing a three-dimensionally integrated structure having a clamping surface and a wafer stack with a chamfered surface" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,771, issued on Aug. 4, was assigned to WUHAN XINXIN SEMICONDUCTOR MANUFACTURING Co. LTD. (Wuhan, China). "Method of manufacturing a three-di... Read More


US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 4 for "Semiconductor structure with different distances between gates and source contacts, and method of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,772, issued on Aug. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure with diff... Read More