ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,765, issued on Aug. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and methods of formation" was invented by Shahaji B. More (Hsinchu City, Taiwan), Cheng-Han Lee (New Taipei City, Taiwan) and Pei-Shan Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein provide a method. The method includes forming, in a nanostructure transistor device, a recessed portion for a source/drain region of the nanostructure transistor device. The method also includes forming an inner spacer on a bottom of the recessed portion and on sidewalls of the recessed porti...