ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,767, issued on Aug. 4, was assigned to Industrial Technology Research Institute (Hsinchu, Taiwan).
"Semiconductor device" was invented by Chih-Hung Yen (Taipei City, Taiwan), Hua-Mao Chen (Tainan City, Taiwan) and Yu-Ting Chen (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a dummy gate structure, and a gate structure. The substrate has a dummy gate trench and a gate trench, and includes a first well region, a second well region and a source region. The first well region is formed by doping at least one element from a first element group, and has a first conductive channel. The secon...