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US Patent Issued to SUNRISE MEMORY on Aug. 4 for "Methods for fabrication of 3-dimensional nor memory arrays" (Arizona, California Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,701, issued on Aug. 4, was assigned to SUNRISE MEMORY Corp. (San Jose, Calif.). "Methods for fabrication of 3-dimensional nor memory arrays"... Read More


US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 4 for "Three-dimensional memory device and method for manufacturing three-dimensional memory device" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,702, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory device and method for ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor memory device including gate electrodes with internal voids and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,703, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device including gate ele... Read More


US Patent Issued to Kioxia on Aug. 4 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,704, issued on Aug. 4, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device" was invented by Daisuke Kawamura (Kiyosu, Japan),... Read More


US Patent Issued to Yangtze Memory Technologies on Aug. 4 for "Semiconductor structures and fabrication methods thereof, three-dimensional memories, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,705, issued on Aug. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Semiconductor structures and fabrication method... Read More


US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 4 for "Three-dimensional memory device with support structures in gate line slits and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,706, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory device with support st... Read More


US Patent Issued to Yangtze Memory Technologies on Aug. 4 for "Memory device containing TSG deck with reduced wafer bow and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,707, issued on Aug. 4, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device containing TSG deck with reduced ... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor memory devices having stacked structures therein that support high integration" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,708, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices having stacked st... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Non-volatile memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,709, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Non-volatile memory device" was invented by... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,710, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and electronic system inc... Read More