US Patent Issued to SAMSUNG ELECTRONICS on Aug. 4 for "Semiconductor memory device including gate electrodes with internal voids and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,703, issued on Aug. 4, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea).

"Semiconductor memory device including gate electrodes with internal voids and electronic system including the same" was invented by Hyo Seok Choi (Hwaseong-si, South Korea), Kyoung Sun Kim (Suwon-si, South Korea), Hee Jeong Son (Gumi-si, South Korea), Min Ju Kang (Seoul, South Korea) and Seong Joon Ahn (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a cell substrate including a cell array region and an extended region, gate electrodes stacked on the cell substrate, the gate electrodes including mol...