US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 4 for "Three-dimensional memory device with support structures in gate line slits and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,706, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device with support structures in gate line slits and methods for forming the same" was invented by Zongliang Huo (Wuhan, China), Haohao Yang (Wuhan, China), Wei Xu (Wuhan, China), Ping Yan (Wuhan, China), Pan Huang (Wuhan, China) and Wenbin Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a memory stack including interleaved a plurality of conductor layers and a plurality of insulating layers extending laterally in the memory stack, a memory block including a plurality ...