US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 4 for "Three-dimensional memory device and method for manufacturing three-dimensional memory device" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,702, issued on Aug. 4, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device and method for manufacturing three-dimensional memory device" was invented by Zhaohui Tang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device and a method for manufacturing the same are provided. The method includes steps as follows. A semiconductor structure including a substrate and a stacked structure on the substrate is provided. The stacked structure includes alternately stacked gate layers and dielectric layers, or alternately stacked dummy gate layers and dielectric layers. The...