US Patent Issued to SHIN-ETSU HANDOTAI on Aug. 11 for "Method for manufacturing SOI wafer and SOI wafer" (Japanese Inventor)

Posted On: 2026-08-12

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,944, issued on Aug. 11, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo). "Method for manufacturing SOI wafer and SOI wafer" was invente... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device" (South Korean Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,945, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Jang H... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Integrated circuit devices including metal structures having a curved interface and methods of forming the same" (New York Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,946, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Integrated circuit devices including metal s... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Structures for reducing gap fill defects in a vertically stacked semiconductor device and methods for forming the same" (Taiwanese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,947, issued on Aug. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Structures for reducing gap fill de... Read More

US Patent Issued to Intel on Aug. 11 for "Conductive via structures for gate contact or trench contact" (Oregon Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,948, issued on Aug. 11, was assigned to Intel Corp. (Santa Clara, Calif.). "Conductive via structures for gate contact or trench contact" w... Read More

US Patent Issued to Kioxia on Aug. 11 for "Memory device" (Japanese Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,949, issued on Aug. 11, was assigned to Kioxia Corp. (Tokyo). "Memory device" was invented by Natsuki Fukuda (Yokkaichi, Japan) and Tadashi... Read More

US Patent Issued to Micron Technology on Aug. 11 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,950, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory circuitry and method used in forming memory circuitr... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor memory device including pad sacrifice films and electronic system including the same" (South Korean Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,951, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device including pad sa... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including BSPDN structures in small-CPP area and large-CPP area" (New York, Virginia Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,952, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including BSPDN structu... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer" (New York Inventors)

Posted On: 2026-08-12

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ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,953, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including self-aligned ... Read More

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US Patent Issued to SHIN-ETSU HANDOTAI on Aug. 11 for "Method for manufacturing SOI wafer and SOI wafer" (Japanese Inventor)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Integrated circuit devices including metal structures having a curved interface and methods of forming the same" (New York Inventors)

US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 11 for "Structures for reducing gap fill defects in a vertically stacked semiconductor device and methods for forming the same" (Taiwanese Inventors)

US Patent Issued to Intel on Aug. 11 for "Conductive via structures for gate contact or trench contact" (Oregon Inventors)

US Patent Issued to Kioxia on Aug. 11 for "Memory device" (Japanese Inventors)

US Patent Issued to Micron Technology on Aug. 11 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor memory device including pad sacrifice films and electronic system including the same" (South Korean Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including BSPDN structures in small-CPP area and large-CPP area" (New York, Virginia Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device including self-aligned backside contact structure formed based on contact isolation layer" (New York Inventors)