US Patent Issued to SHIN-ETSU HANDOTAI on Aug. 11 for "Method for manufacturing SOI wafer and SOI wafer" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,944, issued on Aug. 11, was assigned to SHIN-ETSU HANDOTAI Co. LTD. (Tokyo).

"Method for manufacturing SOI wafer and SOI wafer" was invented by Isao Yokokawa (Takasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing an SOI wafer including: a step of forming a silicon oxide film by thermal oxidation on an entire surface of a base wafer containing a dopant; and bonding a main surface of a bond wafer to a first main surface via the silicon oxide film, wherein, prior to the thermal oxidation step, a step of forming a CVD insulator film on a second main surface; and a step of forming, on the first main surface, a barrier ...