ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,659, issued on Aug. 11, was assigned to HUNAN SAN'AN SEMICONDUCTOR Co. LTD. (Changsha, China). "Semiconductor structure and method for manu... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,661, issued on Aug. 11, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China). "Diode and manufacturing method therefor, and semico... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,662, issued on Aug. 11, was assigned to BYD Co. Ltd. (Shenzhen, China). "IGBT module, motor controller, and vehicle" was invented by Guangm... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,663, issued on Aug. 11, was assigned to Renesas Electronics Corp. (Tokyo). "Semiconductor device and method of manufacturing the same" was ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,664, issued on Aug. 11, was assigned to ROBERT BOSCH GMBH (Stuttgart, Germany). "Transistor arrangement and method for producing a transist... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,665, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor structure and met... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,666, issued on Aug. 11, was assigned to STMicroelectronics International N.V. (Geneva). "HEMT device having improved on-state performance a... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,667, issued on Aug. 11, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "High electron mobility transistor with gate ... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,668, issued on Aug. 11, was assigned to INVENTION AND COLLABORATION LABORATORY PTE. LTD. (Singapore). "Planar MOSFET with light, regular an... Read More
ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,669, issued on Aug. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "FinFET device structure with ex... Read More