US Patent Issued to INTERNATIONAL BUSINESS MACHINES on Aug. 11 for "High electron mobility transistor with gate electrode below the channel" (Swiss Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,667, issued on Aug. 11, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.).

"High electron mobility transistor with gate electrode below the channel" was invented by Cezar Bogdan Zota (Rueschlikon, Switzerland), Eunjung Cha (Adliswill, Switzerland), Thomas Morf (Gross, Switzerland) and Peter Mueller (Zurich).

According to the abstract* released by the U.S. Patent & Trademark Office: "One or more systems, devices, methods of use and/or methods of fabrication provided herein relate to a high-electron-mobility transistor with a gate electrode below the channel. According to one embodiment, a device comprises a source electrode and a drain electrode coupled to a top...