ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,666, issued on Aug. 11, was assigned to STMicroelectronics International N.V. (Geneva).
"HEMT device having improved on-state performance and manufacturing process thereof" was invented by Cristina Tringali (Augusta, Italy), Aurore Constant (Tours, France), Maria Eloisa Castagna (Catania, Italy) and Ferdinando Iucolano (Gravina di Catania, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "A HEMT transistor has a body having a top surface and a heterostructure, and a gate region having a semiconductor material and arranged on the top surface of the body. The gate region has a first lateral sidewall and a second lateral sidewall opposite to the fir...