US Patent Issued to CSMC TECHNOLOGIES FAB2 on Aug. 11 for "Diode and manufacturing method therefor, and semiconductor device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,661, issued on Aug. 11, was assigned to CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China).

"Diode and manufacturing method therefor, and semiconductor device" was invented by Yan Gu (Wuxi, China), Hua Song (Wuxi, China), Nailong He (Wuxi, China) and Sen Zhang (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A diode and a manufacturing method therefor, and a semiconductor device. The diode includes: a substrate; an insulating buried layer provided on the substrate; a semiconductor layer provided on the insulating buried layer; anode; and a cathode, comprising: a trench-type contact, a trench being filled with a contact material, the trench ext...