Exclusive

Publication

Byline

Location

US Patent Issued to SAMSUNG ELECTRONICS, UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY on Aug. 11 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,629, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea) and UIF (UNIVERSITY INDUSTRY FOUNDATION), YO... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,630, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device" was invented by Jimin ... Read More


US Patent Issued to Micron Technology on Aug. 11 for "Damascene digit lines" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,631, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho). "Damascene digit lines" was invented by Russell A. Benson (B... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,632, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Integrated circuit device and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,633, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Integrated circuit device and method of m... Read More


US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Three-dimensional integration structure and method of forming the same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,634, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional integration structure and m... Read More


US Patent Issued to Kioxia on Aug. 11 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,635, issued on Aug. 11, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device" was invented by Shigehiro Watanabe (Yokkaichi M... Read More


US Patent Issued to SK hynix on Aug. 11 for "Method for fabricating semiconductor memory device with source coupling structure" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,636, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Method for fabricating semiconductor memory device with so... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 11 for "Semiconductor devices and data storage systems including the same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,637, issued on Aug. 11, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor devices and data storage syste... Read More


US Patent Issued to Sandisk Technologies on Aug. 11 for "Three-dimensional memory device with through-stack contact via with conductive fins" (California Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,638, issued on Aug. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Three-dimensional memory device with through-stack c... Read More