US Patent Issued to Sandisk Technologies on Aug. 11 for "Three-dimensional memory device with through-stack contact via with conductive fins" (California Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,638, issued on Aug. 11, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with through-stack contact via with conductive fins" was invented by Koichi Matsuno (Fremont, Calif.) and Johann Alsmeier (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first alternating stack of first insulating layers and first electrically conductive layers, a first dielectric material portion overlying first stepped surfaces of the first alternating stack, a memory opening vertically extending through the first alternating stack, a memory opening fill structure located in the memory o...