US Patent Issued to SK hynix on Aug. 11 for "Method for fabricating semiconductor memory device with source coupling structure" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,636, issued on Aug. 11, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Method for fabricating semiconductor memory device with source coupling structure" was invented by Jin Ho Bin (Icheon-si, South Korea), Chul Young Kim (Icheon-si, South Korea), Ji Yeon Baek (Icheon-si, South Korea) and Sul Gi Jung (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor memory device includes forming a preliminary source structure including a source sacrificial layer, forming a preliminary stacked structure including insulating layers and first sacrificial layers over the preliminary source structu...