US Patent Issued to Yangtze Memory Technologies on Aug. 11 for "Three-dimensional integration structure and method of forming the same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,634, issued on Aug. 11, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional integration structure and method of forming the same" was invented by SiPing Hu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a first substrate layer having a first side over which devices are formed. In the semiconductor device, a first dielectric structure is formed over the first side of the first substrate layer in which the devices are positioned. The first dielectric structure includes a bottom surface in contact with the first side of the first subs...