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US Patent Issued to Greenliant IP on April 14 for "NOR memory cell with floating gate" (California Inventor)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,134, issued on April 14, was assigned to Greenliant IP LLC (Santa Clara, Calif.). "NOR memory cell with floating gate" was invented by Bin... और पढ़ें


US Patent Issued to Sandisk Technologies on April 14 for "Uniform GIDL current during NAND erase" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,135, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Uniform GIDL current during NAND erase" was invent... और पढ़ें


US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE D'AIX-MARSEILLE on April 14 for "Three-dimensional NOR memory structure with resistive memory cells" (French Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,136, issued on April 14, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris), CENTRE NATIONAL DE LA RECH... और पढ़ें


US Patent Issued to Yangtze Memory Technologies on April 14 for "Memory systems, operating methods, and readable storage mediums" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,137, issued on April 14, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory systems, operating methods, and read... और पढ़ें


US Patent Issued to Micron Technology on April 14 for "Partial block read voltage offset" (California, Idaho Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,138, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho). "Partial block read voltage offset" was invented by Zhongg... और पढ़ें


US Patent Issued to Sandisk Technologies on April 14 for "Non-volatile memory with high performance read" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,139, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Non-volatile memory with high performance read" wa... और पढ़ें


US Patent Issued to MACRONIX International on April 14 for "Soft programming method and erasing method for memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,140, issued on April 14, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Soft programming method and erasing method fo... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Memory system and operating method thereof" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,141, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Memory system and operating method thereof... और पढ़ें


US Patent Issued to CHENGDU BOE OPTOELECTRONICS TECHNOLOGY, BOE TECHNOLOGY GROUP on April 14 for "Shift register unit, gate driving circuit including the shift register unit and display panel including the gate driving circuit" (Chinese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,142, issued on April 14, was assigned to CHENGDU BOE OPTOELECTRONICS TECHNOLOGY Co. LTD. (Chengdu, China) and BOE TECHNOLOGY GROUP Co. LTD.... और पढ़ें


US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Memory controller for controlling background operation and operation method thereof" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,143, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Memory controller for controlling backgrou... और पढ़ें