US Patent Issued to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, UNIVERSITE D'AIX-MARSEILLE on April 14 for "Three-dimensional NOR memory structure with resistive memory cells" (French Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,136, issued on April 14, was assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (Paris), CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Paris) and UNIVERSITE D'AIX-MARSEILLE (Marseilles, France).

"Three-dimensional NOR memory structure with resistive memory cells" was invented by Mona Ezzadeen (Grenoble, France), Francois Andrieu (Grenoble, France) and Jean-Michel Portal (Saint Savournin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A data storage circuit of NOR type includes a three-dimensional memory structure, produced on a first semiconductor substrate, and comprising a plurality of memory planes, each plane form...