US Patent Issued to Sandisk Technologies on April 14 for "Non-volatile memory with high performance read" (California Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,139, issued on April 14, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with high performance read" was invented by Jiahui Yuan (Fremont, Calif.), Jiacen Guo (Sunnyvale, Calif.) and Deepanshu Dutta (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "When performing a read process, a non-volatile memory first performs a pre-read sensing of the condition of memory cells connected to neighbor word lines. While applying a first word line voltage associated with a first programmed data state to the selected word line, the memory system performs two sensing operations for the first programmed data state on ...