US Patent Issued to Micron Technology on April 14 for "Partial block read voltage offset" (California, Idaho Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,603,138, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho).

"Partial block read voltage offset" was invented by Zhongguang Xu (San Jose, Calif.), Murong Lang (San Jose, Calif.), Zhenming Zhou (San Jose, Calif.), Ugo Russo (Boise, Idaho), Niccolo' Righetti (Boise, Idaho) and Nicola Ciocchini (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device may include a memory and a controller. The controller may be configured to receive a read command associated with a block of the memory. The controller may be configured to determine a block type associated with the block. The controller may be configured to identify...