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US Patent Issued to Sandisk Technologies on Sept. 15 for "Apparatus and methods for modifying impedances in time-based vector-matrix multiplication circuits" (California Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,322, issued on Sept. 15, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Apparatus and methods for modifying impedances in ... Read More


US Patent Issued to Silicon Storage Technology on Sept. 15 for "Programming method for non-volatile memory cells" (California Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,323, issued on Sept. 15, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.). "Programming method for non-volatile memory c... Read More


US Patent Issued to Kioxia on Sept. 15 for "Memory system performing read operation using read voltage" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,324, issued on Sept. 15, was assigned to Kioxia Corp. (Tokyo). "Memory system performing read operation using read voltage" was invented b... Read More


US Patent Issued to Silicon Storage Technology on Sept. 15 for "Sequential erase for tuning the program state of non-volatile memory cells" (American, French Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,325, issued on Sept. 15, was assigned to Silicon Storage Technology Inc. (San Jose, Calif.). "Sequential erase for tuning the program stat... Read More


US Patent Issued to Yangtze Memory Technologies on Sept. 15 for "Memory system, memory device with two-stage bit line charging, and operation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,326, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory system, memory device with two-stage... Read More


US Patent Issued to Micron Technology on Sept. 15 for "Operations on partially programmed erase blocks" (California Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,327, issued on Sept. 15, was assigned to Micron Technology Inc. (Boise, Idaho). "Operations on partially programmed erase blocks" was inve... Read More


US Patent Issued to Yangtze Memory Technologies on Sept. 15 for "Memory device, memory system, memory controller, and operation method" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,328, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device, memory system, memory contro... Read More


US Patent Issued to SK hynix on Sept. 15 for "Semiconductor memory device and method of operating the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,329, issued on Sept. 15, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor memory device and method of operating th... Read More


US Patent Issued to TDK on Sept. 15 for "Power supply apparatus and memory system" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,330, issued on Sept. 15, was assigned to TDK Corp. (Tokyo). "Power supply apparatus and memory system" was invented by Yugi Ito (Tokyo), N... Read More


US Patent Issued to Yangtze Memory Technologies on Sept. 15 for "Programming methods of memory, memories, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,331, issued on Sept. 15, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Programming methods of memory, memories, an... Read More