US Patent Issued to Kioxia on Sept. 15 for "Memory system performing read operation using read voltage" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,324, issued on Sept. 15, was assigned to Kioxia Corp. (Tokyo).

"Memory system performing read operation using read voltage" was invented by Hiroyuki Nagashima (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory system includes a nonvolatile semiconductor memory device, a voltage generation unit and a control unit. The nonvolatile semiconductor memory device includes a memory cell array having a plurality of blocks each including a plurality of memory cells, and a voltage generation unit configured to change a read level of the memory cell. The control unit controls write, read, and erase of the nonv...