ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,329, issued on Sept. 15, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Semiconductor memory device and method of operating the same" was invented by Mu Sun Kim (Gyeonggi-do, South Korea), Yun Cheol Kim (Gyeonggi-do, South Korea), Byoung Jun Park (Gyeonggi-do, South Korea) and Dae Myeong Lee (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein are a semiconductor memory device and a method of operating the same. The semiconductor memory device may include a memory block including a plurality of memory cells, a voltage generation circuit configured to generate a read voltage and a pass voltage to be ap...